Toshiba Semiconductor and Storage - TK35S04K3L(T6L1,NQ

KEY Part #: K6420306

TK35S04K3L(T6L1,NQ Vidiny (USD) [180543pcs Stock]

  • 1 pcs$0.22648
  • 2,000 pcs$0.22536

Ampahany:
TK35S04K3L(T6L1,NQ
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 40V 35A DPAK-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Ny thyristors - DIAC, SIDACs, Modules maotera mpamily, Diodes - Miova endrika ny habeny (varicaps, varact, Diode - Mpitaovana - Arrays, Transistors - FETs, MOSFETs - Single, Ny kristianao - SCR and Transistors - FET, MOSFET - RF ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TK35S04K3L(T6L1,NQ electronic components. TK35S04K3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TK35S04K3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK35S04K3L(T6L1,NQ Toetran'ny vokatra

Ampahany : TK35S04K3L(T6L1,NQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 40V 35A DPAK-3
Series : U-MOSIV
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 35A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 10.3 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1370pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 58W (Tc)
Ny mari-pana : 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : DPAK+
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63

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