Global Power Technologies Group - GP1M004A090H

KEY Part #: K6402706

[2611pcs Stock]


    Ampahany:
    GP1M004A090H
    Manufacturer:
    Global Power Technologies Group
    Famaritana antsipirihany:
    MOSFET N-CH 900V 4A TO220.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Diodes - Mpihazakazaka - Iray, Ny thyristors - DIAC, SIDACs, Transistors - JFET, Diode - Mpitaovana - Arrays, Transistors - IGBTs - Tafidina, Diodes - Rectifiers Bridge and Transistors - FETs, MOSFETs - Single ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Global Power Technologies Group GP1M004A090H electronic components. GP1M004A090H can be shipped within 24 hours after order. If you have any demands for GP1M004A090H, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP1M004A090H Toetran'ny vokatra

    Ampahany : GP1M004A090H
    Manufacturer : Global Power Technologies Group
    Description : MOSFET N-CH 900V 4A TO220
    Series : -
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 900V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4A (Tc)
    Fandefasana fiara (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 4 Ohm @ 2A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
    Vgs (Max) : ±30V
    Fampiasana masinina (Ciss) (Max) @ Vds : 955pF @ 25V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 123W (Tc)
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Through Hole
    Package Fitaovana mpamatsy : TO-220
    Famonosana / tranga : TO-220-3

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