Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 61.8A TO-247
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
61.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 30.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
6500pF @ 300V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
400W (Tc)
Ny mari-pana :
150°C (TJ)
Package Fitaovana mpamatsy :
TO-247
Famonosana / tranga :
TO-247-3