Toshiba Semiconductor and Storage - TK62N60W,S1VF

KEY Part #: K6397748

TK62N60W,S1VF Vidiny (USD) [6289pcs Stock]

  • 1 pcs$7.20985
  • 30 pcs$6.06256
  • 120 pcs$5.57096

Ampahany:
TK62N60W,S1VF
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 600V 61.8A TO-247.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diode - Mpitaovana - Arrays, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - tokan-tena and Diodes - Rectifiers Bridge ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TK62N60W,S1VF electronic components. TK62N60W,S1VF can be shipped within 24 hours after order. If you have any demands for TK62N60W,S1VF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK62N60W,S1VF Toetran'ny vokatra

Ampahany : TK62N60W,S1VF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 61.8A TO-247
Series : DTMOSIV
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 61.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 30.9A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 6500pF @ 300V
Fihetsika FET : Super Junction
Fandroahana herinaratra (Max) : 400W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-247
Famonosana / tranga : TO-247-3

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