[846pcs Stock]
- Ampahany:
- SI4108DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 75V 20.5A 8-SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Diode - Zener - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Modules, Tratrao - SCR - Modules, Tratrao - TRIACs, Transistors - FET, MOSFET - RF and Transistor - Unjunction Programmable ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI4108DY-T1-GE3 electronic components. SI4108DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4108DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4108DY-T1-GE3 Toetran'ny vokatra
Ampahany :
SI4108DY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 75V 20.5A 8-SOIC
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.8 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2100pF @ 38V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.6W (Ta), 7.8W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SO
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
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