Infineon Technologies - IPP084N06L3GHKSA1

KEY Part #: K6402309

[2749pcs Stock]


    Ampahany:
    IPP084N06L3GHKSA1
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET N-CH 60V 50A TO220-3.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistor - FET, MOSFET - Arrays, Ny kristianao - SCR, Diodes - Rectifiers Bridge, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - JFET, Tratrao - SCR - Modules and Transistor - Tanjona manokana ...
    Ny tombony azo amin'ny fifaninanana:
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    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP084N06L3GHKSA1 Toetran'ny vokatra

    Ampahany : IPP084N06L3GHKSA1
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 60V 50A TO220-3
    Series : OptiMOS™
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 50A (Tc)
    Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 8.4 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 34µA
    Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : 4900pF @ 30V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 79W (Tc)
    Ny mari-pana : -55°C ~ 175°C (TJ)
    Type Type : Through Hole
    Package Fitaovana mpamatsy : PG-TO220-3
    Famonosana / tranga : TO-220-3