Toshiba Semiconductor and Storage - TK6Q60W,S1VQ

KEY Part #: K6418465

TK6Q60W,S1VQ Vidiny (USD) [63944pcs Stock]

  • 1 pcs$0.67600
  • 75 pcs$0.67264

Ampahany:
TK6Q60W,S1VQ
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N CH 600V 6.2A IPAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Modules maotera mpamily, Diodes - Zener - Iray, Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diode - Zener - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik and Diodes - Mpihazakazaka - Iray ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TK6Q60W,S1VQ electronic components. TK6Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK6Q60W,S1VQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6Q60W,S1VQ Toetran'ny vokatra

Ampahany : TK6Q60W,S1VQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 6.2A IPAK
Series : DTMOSIV
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 6.2A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 820 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 390pF @ 300V
Fihetsika FET : Super Junction
Fandroahana herinaratra (Max) : 60W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : I-PAK
Famonosana / tranga : TO-251-3 Stub Leads, IPak

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