IAUS165N08S5N029ATMA1 Vidiny (USD) [42793pcs Stock]
- 1 pcs$0.91372
- Ampahany:
- IAUS165N08S5N029ATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 80V 660A PG-HSOG-8-1.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FET, MOSFET - RF, Tratrao - TRIACs, Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - Zener - Iray, Tratrao - SCR - Modules, Transistors - IGBTs - tokan-tena and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IAUS165N08S5N029ATMA1 electronic components. IAUS165N08S5N029ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUS165N08S5N029ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUS165N08S5N029ATMA1 Toetran'ny vokatra
Ampahany :
IAUS165N08S5N029ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 80V 660A PG-HSOG-8-1
Series :
Automotive, AEC-Q101, OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
165A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
6370pF @ 40V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
167W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-HSOG-8-1
Famonosana / tranga :
8-PowerSMD, Gull Wing
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