Infineon Technologies - IPA045N10N3GXKSA1

KEY Part #: K6399380

IPA045N10N3GXKSA1 Vidiny (USD) [32929pcs Stock]

  • 1 pcs$1.26040
  • 10 pcs$1.08162
  • 100 pcs$0.86915
  • 500 pcs$0.67598
  • 1,000 pcs$0.56010

Ampahany:
IPA045N10N3GXKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 100V 64A TO220-FP.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Diodes - Mpihazakazaka - Iray, Diode - Zener - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - TRIACs, Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays and Diodes - Zener - Iray ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA045N10N3GXKSA1 Toetran'ny vokatra

Ampahany : IPA045N10N3GXKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 64A TO220-FP
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 64A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 64A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 117nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 8410pF @ 50V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 39W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-FP
Famonosana / tranga : TO-220-3 Full Pack