Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 100V 9.4A 8TSON
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9.4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
33 mOhm @ 4.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
880pF @ 50V
Fandroahana herinaratra (Max) :
700mW (Ta), 27W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-TSON Advance (3.3x3.3)
Famonosana / tranga :
8-PowerVDFN