Vishay Siliconix - SIHH14N65E-T1-GE3

KEY Part #: K6397687

SIHH14N65E-T1-GE3 Vidiny (USD) [33767pcs Stock]

  • 1 pcs$1.22660
  • 3,000 pcs$1.22050

Ampahany:
SIHH14N65E-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 650V 15A PWRPAK 8X8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - SCR - Modules, Transistorio - Bipolar (BJT) - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - Tanjona manokana, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - Unjunction Programmable, Transistor - FET, MOSFET - Arrays and Diode - Mpitaovana - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SIHH14N65E-T1-GE3 electronic components. SIHH14N65E-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH14N65E-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHH14N65E-T1-GE3 Toetran'ny vokatra

Ampahany : SIHH14N65E-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 650V 15A PWRPAK 8X8
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 15A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 260 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 96nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 1712pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 156W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PowerPAK® 8 x 8
Famonosana / tranga : 8-PowerTDFN

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