Toshiba Semiconductor and Storage - TK35A08N1,S4X

KEY Part #: K6397619

TK35A08N1,S4X Vidiny (USD) [88227pcs Stock]

  • 1 pcs$0.48500
  • 50 pcs$0.38892
  • 100 pcs$0.32190
  • 500 pcs$0.24963
  • 1,000 pcs$0.19708

Ampahany:
TK35A08N1,S4X
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 80V 35A TO-220.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Transistor - FET, MOSFET - Arrays, Ny thyristors - DIAC, SIDACs, Tratrao - SCR - Modules, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Tanjona manokana, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - RF ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TK35A08N1,S4X electronic components. TK35A08N1,S4X can be shipped within 24 hours after order. If you have any demands for TK35A08N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK35A08N1,S4X Toetran'ny vokatra

Ampahany : TK35A08N1,S4X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 80V 35A TO-220
Series : U-MOSVIII-H
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 35A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12.2 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1700pF @ 40V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 30W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-220SIS
Famonosana / tranga : TO-220-3 Full Pack

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