IPN60R2K1CEATMA1 Vidiny (USD) [451118pcs Stock]
- 1 pcs$0.08199
- 3,000 pcs$0.06763
- Ampahany:
- IPN60R2K1CEATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET NCH 600V 3.7A SOT223.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny thyristors - DIAC, SIDACs, Transistor - Unjunction Programmable, Ny kristianao - SCR, Transistors - IGBTs - Modules and Transistor - FET, MOSFET - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPN60R2K1CEATMA1 electronic components. IPN60R2K1CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R2K1CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R2K1CEATMA1 Toetran'ny vokatra
Ampahany :
IPN60R2K1CEATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET NCH 600V 3.7A SOT223
Series :
CoolMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.1 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs :
6.7nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
140pF @ 100V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
5W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-SOT223
Famonosana / tranga :
SOT-223-3
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