FF6MR12W2M1B11BOMA1 Vidiny (USD) [291pcs Stock]
- 1 pcs$158.99959
- Ampahany:
- FF6MR12W2M1B11BOMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET MODULE 1200V 200A.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Diodes - Rectifiers Bridge, Tratrao - SCR - Modules, Tratrao - TRIACs, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - tokan-tena and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies FF6MR12W2M1B11BOMA1 electronic components. FF6MR12W2M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FF6MR12W2M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF6MR12W2M1B11BOMA1 Toetran'ny vokatra
Ampahany :
FF6MR12W2M1B11BOMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET MODULE 1200V 200A
Series :
CoolSiC™
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
200A (Tj)
Rds On (Max) @ Id, Vgs :
5.63 mOhm @ 200A, 15V
Vgs (th) (Max) @ Id :
5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs :
496nC @ 15V
Fampiasana masinina (Ciss) (Max) @ Vds :
14700pF @ 800V
Hery - Max :
20mW (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Chassis Mount
Famonosana / tranga :
Module
Package Fitaovana mpamatsy :
AG-EASY2BM-2
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