Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N/P-CH 20V 4A UDFN6
Type FET :
N and P-Channel
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Type Type :
Surface Mount
Famonosana / tranga :
6-WDFN Exposed Pad
Package Fitaovana mpamatsy :
6-UDFN (2x2)