SI6913DQ-T1-E3 Vidiny (USD) [85512pcs Stock]
- 1 pcs$0.45726
- 3,000 pcs$0.42841
- Ampahany:
- SI6913DQ-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2P-CH 12V 4.9A 8TSSOP.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Modules maotera mpamily, Transistors - FETs, MOSFETs - Single, Diodes - Mpihazakazaka - Iray and Tratrao - TRIACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI6913DQ-T1-E3 electronic components. SI6913DQ-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI6913DQ-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6913DQ-T1-E3 Toetran'ny vokatra
Ampahany :
SI6913DQ-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2P-CH 12V 4.9A 8TSSOP
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 P-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4.9A
Rds On (Max) @ Id, Vgs :
21 mOhm @ 5.8A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
830mW
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-TSSOP (0.173", 4.40mm Width)
Package Fitaovana mpamatsy :
8-TSSOP
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