Diodes Incorporated - DMG6601LVT-7

KEY Part #: K6522296

DMG6601LVT-7 Vidiny (USD) [953326pcs Stock]

  • 1 pcs$0.03880
  • 3,000 pcs$0.03524

Ampahany:
DMG6601LVT-7
Manufacturer:
Diodes Incorporated
Famaritana antsipirihany:
MOSFET N/P-CH 30V 26TSOT.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays, Transistors - JFET, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Single, mialoha alik ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Diodes Incorporated DMG6601LVT-7 electronic components. DMG6601LVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6601LVT-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG6601LVT-7 Toetran'ny vokatra

Ampahany : DMG6601LVT-7
Manufacturer : Diodes Incorporated
Description : MOSFET N/P-CH 30V 26TSOT
Series : -
Ampahany : Active
Type FET : N and P-Channel
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 3.8A, 2.5A
Rds On (Max) @ Id, Vgs : 55 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12.3nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds : 422pF @ 15V
Hery - Max : 850mW
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : SOT-23-6 Thin, TSOT-23-6
Package Fitaovana mpamatsy : TSOT-26

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