IXFT18N100Q3 Vidiny (USD) [7060pcs Stock]
- 1 pcs$6.74670
- 90 pcs$6.71313
- Ampahany:
- IXFT18N100Q3
- Manufacturer:
- IXYS
- Famaritana antsipirihany:
- MOSFET N-CH 1000V 18A TO-268.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers Bridge, Diodes - RF, Diodes - Mpihazakazaka - Iray, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Diode - Zener - Arrays and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in IXYS IXFT18N100Q3 electronic components. IXFT18N100Q3 can be shipped within 24 hours after order. If you have any demands for IXFT18N100Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT18N100Q3 Toetran'ny vokatra
Ampahany :
IXFT18N100Q3
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 18A TO-268
Series :
HiPerFET™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
18A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
4890pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
830W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-268
Famonosana / tranga :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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