IPB60R190C6ATMA1 Vidiny (USD) [57512pcs Stock]
- 1 pcs$0.67987
- Ampahany:
- IPB60R190C6ATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 600V 20.2A TO263.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Ny kristianao - SCR, Transistors - IGBTs - Tafidina, Tratrao - SCR - Modules, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - RF, Diodes - Rectifiers Bridge and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPB60R190C6ATMA1 electronic components. IPB60R190C6ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R190C6ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R190C6ATMA1 Toetran'ny vokatra
Ampahany :
IPB60R190C6ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 20.2A TO263
Series :
CoolMOS™
Ampahany :
Not For New Designs
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20.2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1400pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
151W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D²PAK (TO-263AB)
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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