BSO612CVGHUMA1 Vidiny (USD) [210131pcs Stock]
- 1 pcs$0.17602
- 2,500 pcs$0.16896
- Ampahany:
- BSO612CVGHUMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N/P-CH 60V 2A 8-SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Tanjona manokana, Transistor - FET, MOSFET - Arrays, Tratrao - SCR - Modules, Diode - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSO612CVGHUMA1 electronic components. BSO612CVGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO612CVGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO612CVGHUMA1 Toetran'ny vokatra
Ampahany :
BSO612CVGHUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N/P-CH 60V 2A 8-SOIC
Series :
SIPMOS®
Ampahany :
Active
Type FET :
N and P-Channel
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3A, 2A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
340pF @ 25V
Hery - Max :
2W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy :
PG-DSO-8
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