BSH111BKR Vidiny (USD) [1579220pcs Stock]
- 1 pcs$0.02342
- 3,000 pcs$0.02131
- Ampahany:
- BSH111BKR
- Manufacturer:
- Nexperia USA Inc.
- Famaritana antsipirihany:
- MOSFET N-CH 55V SOT-23.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - Tafidina, Diodes - RF, Diodes - Rectifiers Bridge, Diodes - Miova endrika ny habeny (varicaps, varact and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Nexperia USA Inc. BSH111BKR electronic components. BSH111BKR can be shipped within 24 hours after order. If you have any demands for BSH111BKR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSH111BKR Toetran'ny vokatra
Ampahany :
BSH111BKR
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 55V SOT-23
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
210mA (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.5nC @ 4.5V
Vgs (Max) :
±10V
Fampiasana masinina (Ciss) (Max) @ Vds :
30pF @ 30V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
302mW (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-236AB
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
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