Infineon Technologies - SPI80N06S-08

KEY Part #: K6413408

[13110pcs Stock]


    Ampahany:
    SPI80N06S-08
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET N-CH 55V 80A I2PAK.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - RF, Diodes - Rectifiers Bridge, Transistors - JFET and Ny kristianao - SCR ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies SPI80N06S-08 electronic components. SPI80N06S-08 can be shipped within 24 hours after order. If you have any demands for SPI80N06S-08, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPI80N06S-08 Toetran'ny vokatra

    Ampahany : SPI80N06S-08
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 55V 80A I2PAK
    Series : SIPMOS®
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 55V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 80A (Tc)
    Fandefasana fiara (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 8 mOhm @ 80A, 10V
    Vgs (th) (Max) @ Id : 4V @ 240µA
    Gate Charge (Qg) (Max) @ Vgs : 187nC @ 10V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : 3660pF @ 25V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 300W (Tc)
    Ny mari-pana : -55°C ~ 175°C (TJ)
    Type Type : Through Hole
    Package Fitaovana mpamatsy : PG-TO262-3-1
    Famonosana / tranga : TO-262-3 Long Leads, I²Pak, TO-262AA

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