IPT65R105G7XTMA1 Vidiny (USD) [28993pcs Stock]
- 1 pcs$1.49136
- 2,000 pcs$1.48394
- Ampahany:
- IPT65R105G7XTMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - FET, MOSFET - RF, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - RF, Transistors - IGBTs - tokan-tena, Transistor - Tanjona manokana and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPT65R105G7XTMA1 electronic components. IPT65R105G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPT65R105G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT65R105G7XTMA1 Toetran'ny vokatra
Ampahany :
IPT65R105G7XTMA1
Manufacturer :
Infineon Technologies
Description :
HIGH POWERNEW
Series :
CoolMOS™ C7
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
24A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
105 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1670pF @ 400V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
156W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-HSOF-8-2
Famonosana / tranga :
8-PowerSFN
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