Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 30V 0.1A VESM
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
100mA (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
2.5V, 4V
Rds On (Max) @ Id, Vgs :
12 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id :
1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
9.1pF @ 3V
Fandroahana herinaratra (Max) :
150mW (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
VESM
Famonosana / tranga :
SOT-723