SI4866BDY-T1-GE3 Vidiny (USD) [847pcs Stock]
- 2,500 pcs$0.19673
- Ampahany:
- SI4866BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 12V 21.5A 8-SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - JFET, Transistors - IGBTs - tokan-tena, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers Bridge, Diode - Zener - Arrays, Diodes - Zener - Iray and Transistorio - Bipolar (BJT) - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI4866BDY-T1-GE3 electronic components. SI4866BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4866BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4866BDY-T1-GE3 Toetran'ny vokatra
Ampahany :
SI4866BDY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 12V 21.5A 8-SOIC
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
21.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
5.3 mOhm @ 12A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 4.5V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
5020pF @ 6V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.5W (Ta), 4.45W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SO
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
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