[8622pcs Stock]
- Ampahany:
- IPB80N06S209ATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 55V 80A TO263-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Tratrao - TRIACs, Diodes - Zener - Iray, Diodes - RF, Diode - Mpitaovana - Arrays, Ny kristianao - SCR, Diodes - Rectifiers Bridge and Transistors - IGBTs - Tafidina ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPB80N06S209ATMA1 electronic components. IPB80N06S209ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80N06S209ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80N06S209ATMA1 Toetran'ny vokatra
Ampahany :
IPB80N06S209ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 55V 80A TO263-3
Series :
OptiMOS™
Ampahany :
Discontinued at Digi-Key
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2360pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
190W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-3-2
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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