Toshiba Semiconductor and Storage - TK8Q65W,S1Q

KEY Part #: K6397811

TK8Q65W,S1Q Vidiny (USD) [59949pcs Stock]

  • 1 pcs$0.71913
  • 75 pcs$0.57949
  • 150 pcs$0.52154
  • 525 pcs$0.40564
  • 1,050 pcs$0.31793

Ampahany:
TK8Q65W,S1Q
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 650V 7.8A IPAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Diode - Mpitaovana - Arrays, Diodes - Rectifiers Bridge, Transistor - Tanjona manokana, Transistors - Bipolar (BJT) - RF, Transistor - Unjunction Programmable and Tratrao - SCR - Modules ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TK8Q65W,S1Q electronic components. TK8Q65W,S1Q can be shipped within 24 hours after order. If you have any demands for TK8Q65W,S1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK8Q65W,S1Q Toetran'ny vokatra

Ampahany : TK8Q65W,S1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 650V 7.8A IPAK
Series : DTMOSIV
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 7.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 670 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 570pF @ 300V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 80W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : I-PAK
Famonosana / tranga : TO-251-3 Stub Leads, IPak

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