SI3900DV-T1-GE3 Vidiny (USD) [203660pcs Stock]
- 1 pcs$0.18161
- 3,000 pcs$0.17054
- Ampahany:
- SI3900DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 20V 2A 6-TSOP.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Tratrao - TRIACs, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - FET, MOSFET - Arrays, Transistors - JFET, Transistor - Unjunction Programmable and Diodes - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI3900DV-T1-GE3 electronic components. SI3900DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3900DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3900DV-T1-GE3 Toetran'ny vokatra
Ampahany :
SI3900DV-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 20V 2A 6-TSOP
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2A
Rds On (Max) @ Id, Vgs :
125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
830mW
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
SOT-23-6 Thin, TSOT-23-6
Package Fitaovana mpamatsy :
6-TSOP
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