Infineon Technologies - IPB17N25S3100ATMA1

KEY Part #: K6419375

IPB17N25S3100ATMA1 Vidiny (USD) [107881pcs Stock]

  • 1 pcs$0.34285
  • 1,000 pcs$0.32537

Ampahany:
IPB17N25S3100ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Diodes - Mpihazakazaka - Iray, Diode - Zener - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - RF, Modules maotera mpamily, Transistor - FET, MOSFET - Arrays and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB17N25S3100ATMA1 Toetran'ny vokatra

Ampahany : IPB17N25S3100ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO263-3
Series : Automotive, AEC-Q101, OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 17A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 4V @ 54µA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1500pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 107W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO263-3-2
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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