TJ60S06M3L(T6L1,NQ Vidiny (USD) [102769pcs Stock]
- 1 pcs$0.40559
- 2,000 pcs$0.40357
- Ampahany:
- TJ60S06M3L(T6L1,NQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET P-CH 60V 60A DPAK-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable, Diodes - RF, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ electronic components. TJ60S06M3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TJ60S06M3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ60S06M3L(T6L1,NQ Toetran'ny vokatra
Ampahany :
TJ60S06M3L(T6L1,NQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 60V 60A DPAK-3
Series :
U-MOSVI
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
60A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
11.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
156nC @ 10V
Vgs (Max) :
+10V, -20V
Fampiasana masinina (Ciss) (Max) @ Vds :
7760pF @ 10V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
100W (Tc)
Ny mari-pana :
175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
DPAK+
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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