EPC2010C Vidiny (USD) [25038pcs Stock]
- 1 pcs$1.81967
- 500 pcs$1.81062
- Ampahany:
- EPC2010C
- Manufacturer:
- EPC
- Famaritana antsipirihany:
- GANFET TRANS 200V 22A BUMPED DIE.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Rectifiers Bridge, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - FET, MOSFET - Arrays, Transistors - JFET, Transistor - Unjunction Programmable and Transistorio - Bipolar (BJT) - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in EPC EPC2010C electronic components. EPC2010C can be shipped within 24 hours after order. If you have any demands for EPC2010C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2010C Toetran'ny vokatra
Ampahany :
EPC2010C
Manufacturer :
EPC
Description :
GANFET TRANS 200V 22A BUMPED DIE
Series :
eGaN®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
22A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 12A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs :
5.3nC @ 5V
Vgs (Max) :
+6V, -4V
Fampiasana masinina (Ciss) (Max) @ Vds :
540pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
-
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
Die Outline (7-Solder Bar)
Famonosana / tranga :
Die
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