Ampahany :
FCP11N60N-F102
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 10.8A TO220F
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10.8A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
299 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35.6nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1505pF @ 100V
Fandroahana herinaratra (Max) :
94W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Package Fitaovana mpamatsy :
TO-220F
Famonosana / tranga :
TO-220-3 Full Pack