SI8812DB-T2-E1 Vidiny (USD) [548287pcs Stock]
- 1 pcs$0.06746
- 3,000 pcs$0.06372
- Ampahany:
- SI8812DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 20V MICROFOOT.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Diodes - Mpihazakazaka - Iray, Ny kristianao - SCR, Transistors - IGBTs - Tafidina, Diodes - RF, Diodes - Miova endrika ny habeny (varicaps, varact, Diode - Zener - Arrays and Transistors - FET, MOSFET - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI8812DB-T2-E1 electronic components. SI8812DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8812DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8812DB-T2-E1 Toetran'ny vokatra
Ampahany :
SI8812DB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V MICROFOOT
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
-
Fandefasana fiara (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
59 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 8V
Vgs (Max) :
±5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
500mW (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
4-Microfoot
Famonosana / tranga :
4-UFBGA
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