Vishay Siliconix - SI1401EDH-T1-GE3

KEY Part #: K6421457

SI1401EDH-T1-GE3 Vidiny (USD) [575693pcs Stock]

  • 1 pcs$0.06425
  • 3,000 pcs$0.06069

Ampahany:
SI1401EDH-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET P-CH 12V 4A SC-70-6.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays, Transistors - FETs, MOSFETs - Single, Transistor - Unjunction Programmable, Transistors - FET, MOSFET - RF and Modules maotera mpamily ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SI1401EDH-T1-GE3 electronic components. SI1401EDH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1401EDH-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1401EDH-T1-GE3 Toetran'ny vokatra

Ampahany : SI1401EDH-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 12V 4A SC-70-6
Series : TrenchFET®
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 34 mOhm @ 5.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 8V
Vgs (Max) : ±10V
Fampiasana masinina (Ciss) (Max) @ Vds : -
Fihetsika FET : -
Fandroahana herinaratra (Max) : 1.6W (Ta), 2.8W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : SC-70-6 (SOT-363)
Famonosana / tranga : 6-TSSOP, SC-88, SOT-363