Taiwan Semiconductor Corporation - TSM60NB190CM2 RNG

KEY Part #: K6399300

TSM60NB190CM2 RNG Vidiny (USD) [62761pcs Stock]

  • 1 pcs$0.62301

Ampahany:
TSM60NB190CM2 RNG
Manufacturer:
Taiwan Semiconductor Corporation
Famaritana antsipirihany:
MOSFET N-CH 600V 18A TO263.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Transistor - Tanjona manokana and Transistors - Bipolar (BJT) - Single, mialoha alik ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Taiwan Semiconductor Corporation TSM60NB190CM2 RNG electronic components. TSM60NB190CM2 RNG can be shipped within 24 hours after order. If you have any demands for TSM60NB190CM2 RNG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM60NB190CM2 RNG Toetran'ny vokatra

Ampahany : TSM60NB190CM2 RNG
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CH 600V 18A TO263
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 18A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 1273pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 150.6W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : TO-263 (D²Pak)
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB