IPD65R660CFDAATMA1 Vidiny (USD) [104787pcs Stock]
- 1 pcs$0.37315
- 2,500 pcs$0.34094
- Ampahany:
- IPD65R660CFDAATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH TO252-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistor - FET, MOSFET - Arrays, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - Unjunction Programmable, Diode - Mpitaovana - Arrays, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD65R660CFDAATMA1 electronic components. IPD65R660CFDAATMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R660CFDAATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R660CFDAATMA1 Toetran'ny vokatra
Ampahany :
IPD65R660CFDAATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH TO252-3
Series :
Automotive, AEC-Q101, CoolMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 3.22A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 214.55µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
543pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
62.5W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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