Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 650V 7A TO-257
teknolojia :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
7A (Tc) (165°C)
Fandefasana fiara (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
170 mOhm @ 7A
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
720pF @ 35V
Fandroahana herinaratra (Max) :
80W (Tc)
Ny mari-pana :
-55°C ~ 225°C (TJ)
Package Fitaovana mpamatsy :
TO-257
Famonosana / tranga :
TO-257-3