FQB4N80TM Vidiny (USD) [102947pcs Stock]
- 1 pcs$0.37982
- 800 pcs$0.34882
- Ampahany:
- FQB4N80TM
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 800V 3.9A D2PAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers Bridge, Diodes - RF, Tratrao - TRIACs, Transistors - FET, MOSFET - RF and Transistor - FET, MOSFET - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor FQB4N80TM electronic components. FQB4N80TM can be shipped within 24 hours after order. If you have any demands for FQB4N80TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB4N80TM Toetran'ny vokatra
Ampahany :
FQB4N80TM
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 3.9A D2PAK
Series :
QFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 Ohm @ 1.95A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
880pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.13W (Ta), 130W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D²PAK (TO-263AB)
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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