NVMFD5C650NLT1G Vidiny (USD) [82350pcs Stock]
- 1 pcs$0.47481
- Ampahany:
- NVMFD5C650NLT1G
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET 2N-CH 60V 111A S08FL.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, Transistor - Unjunction Programmable, Diodes - Rectifiers Bridge, Transistor - FET, MOSFET - Arrays and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor NVMFD5C650NLT1G electronic components. NVMFD5C650NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5C650NLT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFD5C650NLT1G Toetran'ny vokatra
Ampahany :
NVMFD5C650NLT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET 2N-CH 60V 111A S08FL
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 98µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
2546pF @ 25V
Hery - Max :
3.5W (Ta), 125W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerTDFN
Package Fitaovana mpamatsy :
8-DFN (5x6) Dual Flag (SO8FL-Dual)
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