[3277pcs Stock]
- Ampahany:
- IXTD2N60P-1J
- Manufacturer:
- IXYS
- Famaritana antsipirihany:
- MOSFET N-CH 600.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Modules, Transistor - Tanjona manokana, Transistors - IGBTs - Tafidina, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - IGBTs - tokan-tena ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in IXYS IXTD2N60P-1J electronic components. IXTD2N60P-1J can be shipped within 24 hours after order. If you have any demands for IXTD2N60P-1J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD2N60P-1J Toetran'ny vokatra
Ampahany :
IXTD2N60P-1J
Manufacturer :
IXYS
Description :
MOSFET N-CH 600
Series :
PolarHV™
Ampahany :
Last Time Buy
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.1 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
240pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
56W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
Die
Famonosana / tranga :
Die
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