Diodes Incorporated - DMN2014LHAB-7

KEY Part #: K6523167

DMN2014LHAB-7 Vidiny (USD) [437547pcs Stock]

  • 1 pcs$0.08453
  • 3,000 pcs$0.06662

Ampahany:
DMN2014LHAB-7
Manufacturer:
Diodes Incorporated
Famaritana antsipirihany:
MOSFET 2N-CH 20V 9A 6-UDFN.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistors - JFET, Transistors - Bipolar (BJT) - Single, Modules maotera mpamily, Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Ny kristianao - SCR ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Diodes Incorporated DMN2014LHAB-7 electronic components. DMN2014LHAB-7 can be shipped within 24 hours after order. If you have any demands for DMN2014LHAB-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2014LHAB-7 Toetran'ny vokatra

Ampahany : DMN2014LHAB-7
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 20V 9A 6-UDFN
Series : -
Ampahany : Active
Type FET : 2 N-Channel (Dual)
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 9A
Rds On (Max) @ Id, Vgs : 13 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds : 1550pF @ 10V
Hery - Max : 800mW
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : 6-UFDFN Exposed Pad
Package Fitaovana mpamatsy : U-DFN2030-6 (Type B)