FQI4N80TU Vidiny (USD) [87801pcs Stock]
- 1 pcs$0.45781
- 1,000 pcs$0.45554
- Ampahany:
- FQI4N80TU
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 800V 3.9A I2PAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Ny kristianao - SCR, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - tokan-tena, Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - IGBTs - Tafidina and Diodes - Miova endrika ny habeny (varicaps, varact ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor FQI4N80TU electronic components. FQI4N80TU can be shipped within 24 hours after order. If you have any demands for FQI4N80TU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQI4N80TU Toetran'ny vokatra
Ampahany :
FQI4N80TU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 3.9A I2PAK
Series :
QFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 Ohm @ 1.95A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
880pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.13W (Ta), 130W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
I2PAK (TO-262)
Famonosana / tranga :
TO-262-3 Long Leads, I²Pak, TO-262AA
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