SI8425DB-T1-E1 Vidiny (USD) [367832pcs Stock]
- 1 pcs$0.10056
- 3,000 pcs$0.09462
- Ampahany:
- SI8425DB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 20V MICROFOOT.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Ny kristianao - SCR, Transistor - Tanjona manokana, Modules maotera mpamily, Transistors - Bipolar (BJT) - Single, mialoha alik, Ny thyristors - DIAC, SIDACs and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI8425DB-T1-E1 electronic components. SI8425DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8425DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8425DB-T1-E1 Toetran'ny vokatra
Ampahany :
SI8425DB-T1-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 20V MICROFOOT
Series :
TrenchFET®
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
-
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±10V
Fampiasana masinina (Ciss) (Max) @ Vds :
2800pF @ 10V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
1.1W (Ta), 2.7W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
4-WLCSP (1.6x1.6)
Famonosana / tranga :
4-UFBGA, WLCSP
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