SPB21N50C3ATMA1 Vidiny (USD) [42431pcs Stock]
- 1 pcs$0.92151
- Ampahany:
- SPB21N50C3ATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 560V 21A TO-263.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistors - JFET, Diodes - Mpihazakazaka - Iray, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diode - Zener - Arrays, Transistors - IGBTs - Modules, Transistor - Unjunction Programmable and Transistors - IGBTs - tokan-tena ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies SPB21N50C3ATMA1 electronic components. SPB21N50C3ATMA1 can be shipped within 24 hours after order. If you have any demands for SPB21N50C3ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB21N50C3ATMA1 Toetran'ny vokatra
Ampahany :
SPB21N50C3ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 560V 21A TO-263
Series :
CoolMOS™
Ampahany :
Not For New Designs
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
560V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
21A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 13.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2400pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
208W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-3-2
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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