IGLD60R070D1AUMA1 Vidiny (USD) [5863pcs Stock]
- 1 pcs$7.02907
- Ampahany:
- IGLD60R070D1AUMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- IC GAN FET 600V 60A 8SON.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Ny thyristors - DIAC, SIDACs, Tratrao - TRIACs, Transistors - Bipolar (BJT) - Single, Transistor - Tanjona manokana, Transistors - JFET, Diodes - Rectifiers Bridge and Diodes - Mpihazakazaka - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IGLD60R070D1AUMA1 electronic components. IGLD60R070D1AUMA1 can be shipped within 24 hours after order. If you have any demands for IGLD60R070D1AUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGLD60R070D1AUMA1 Toetran'ny vokatra
Ampahany :
IGLD60R070D1AUMA1
Manufacturer :
Infineon Technologies
Description :
IC GAN FET 600V 60A 8SON
Series :
CoolGaN™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
15A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-10V
Fampiasana masinina (Ciss) (Max) @ Vds :
380pF @ 400V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
114W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-LSON-8-1
Famonosana / tranga :
8-LDFN Exposed Pad
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