[1513pcs Stock]
- Ampahany:
- IRFH5220TR2PBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 200V 3.8A PQFN.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Tanjona manokana, Modules maotera mpamily, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - Single, mialoha alik and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRFH5220TR2PBF electronic components. IRFH5220TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH5220TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5220TR2PBF Toetran'ny vokatra
Ampahany :
IRFH5220TR2PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 3.8A PQFN
Series :
HEXFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.8A (Ta), 20A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99.9 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1380pF @ 50V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.6W (Ta), 8.3W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PQFN (5x6)
Famonosana / tranga :
8-VQFN Exposed Pad
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