Vishay Siliconix - SI8819EDB-T2-E1

KEY Part #: K6421527

SI8819EDB-T2-E1 Vidiny (USD) [724691pcs Stock]

  • 1 pcs$0.05104

Ampahany:
SI8819EDB-T2-E1
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET P-CH 12V 2.9A 4-MICROFOOT.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Mpihazakazaka - Iray, Transistors - IGBTs - Modules and Transistors - IGBTs - Tafidina ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SI8819EDB-T2-E1 electronic components. SI8819EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8819EDB-T2-E1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8819EDB-T2-E1 Toetran'ny vokatra

Ampahany : SI8819EDB-T2-E1
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 12V 2.9A 4-MICROFOOT
Series : -
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 2.9A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 1.5V, 3.7V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 1.5A, 3.7V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 8V
Vgs (Max) : ±8V
Fampiasana masinina (Ciss) (Max) @ Vds : 650pF @ 6V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 900mW (Ta)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : 4-MICRO FOOT® (0.8x0.8)
Famonosana / tranga : 4-XFBGA