Vishay Siliconix - SQJ560EP-T1_GE3

KEY Part #: K6523030

SQJ560EP-T1_GE3 Vidiny (USD) [144991pcs Stock]

  • 1 pcs$0.25510

Ampahany:
SQJ560EP-T1_GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET DUAL N P CH 60V PPAK SO-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Tanjona manokana, Transistor - Unjunction Programmable, Transistors - IGBTs - tokan-tena, Diodes - Rectifiers Bridge, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistorio - Bipolar (BJT) - Arrays, Ny kristianao - SCR and Tratrao - TRIACs ...
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We specialize in Vishay Siliconix SQJ560EP-T1_GE3 electronic components. SQJ560EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ560EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ560EP-T1_GE3 Toetran'ny vokatra

Ampahany : SQJ560EP-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET DUAL N P CH 60V PPAK SO-8
Series : Automotive, AEC-Q101, TrenchFET®
Ampahany : Active
Type FET : N and P-Channel
Fihetsika FET : Standard
Drain to Source Voltage (Vdss) : 60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 30A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V, 45nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds : 1650pF @ 25V
Hery - Max : 34W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : PowerPAK® SO-8 Dual
Package Fitaovana mpamatsy : PowerPAK® SO-8 Dual

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