Vishay Siliconix - SI4952DY-T1-E3

KEY Part #: K6524019

[4656pcs Stock]


    Ampahany:
    SI4952DY-T1-E3
    Manufacturer:
    Vishay Siliconix
    Famaritana antsipirihany:
    MOSFET 2N-CH 25V 8A 8-SOIC.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Diode - Zener - Arrays, Ny thyristors - DIAC, SIDACs, Ny kristianao - SCR, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - Single, Transistor - Tanjona manokana and Diodes - Zener - Iray ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Siliconix SI4952DY-T1-E3 electronic components. SI4952DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4952DY-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4952DY-T1-E3 Toetran'ny vokatra

    Ampahany : SI4952DY-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET 2N-CH 25V 8A 8-SOIC
    Series : TrenchFET®
    Ampahany : Obsolete
    Type FET : 2 N-Channel (Dual)
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 25V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 8A
    Rds On (Max) @ Id, Vgs : 23 mOhm @ 7A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
    Fampiasana masinina (Ciss) (Max) @ Vds : 680pF @ 13V
    Hery - Max : 2.8W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : 8-SOIC (0.154", 3.90mm Width)
    Package Fitaovana mpamatsy : 8-SO

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