IRFB59N10DPBF Vidiny (USD) [37557pcs Stock]
- 1 pcs$0.99926
- 10 pcs$0.90393
- 100 pcs$0.72645
- 500 pcs$0.56500
- 1,000 pcs$0.46814
- Ampahany:
- IRFB59N10DPBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 100V 59A TO-220AB.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistors - FETs, MOSFETs - Single, Tratrao - TRIACs, Transistors - FET, MOSFET - RF, Ny kristianao - SCR, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - SCR - Modules and Transistors - IGBTs - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRFB59N10DPBF electronic components. IRFB59N10DPBF can be shipped within 24 hours after order. If you have any demands for IRFB59N10DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB59N10DPBF Toetran'ny vokatra
Ampahany :
IRFB59N10DPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 59A TO-220AB
Series :
HEXFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
59A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 35.4A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
2450pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.8W (Ta), 200W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220AB
Famonosana / tranga :
TO-220-3
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