[745pcs Stock]
- Ampahany:
- IRF6710S2TR1PBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 25V 12A DIRECTFET.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FET, MOSFET - RF, Ny kristianao - SCR, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - FET, MOSFET - Arrays, Ny thyristors - DIAC, SIDACs and Transistor - Unjunction Programmable ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRF6710S2TR1PBF electronic components. IRF6710S2TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6710S2TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6710S2TR1PBF Toetran'ny vokatra
Ampahany :
IRF6710S2TR1PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 12A DIRECTFET
Series :
HEXFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
12A (Ta), 37A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.9 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1190pF @ 13V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
1.8W (Ta), 15W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
DIRECTFET S1
Famonosana / tranga :
DirectFET™ Isometric S1
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